Semiconductor device with capacitor element

ABSTRACT

A semiconductor device includes a substrate and at least one capacitor element. The capacitor element is on the substrate. The capacitor element includes a first electrode with a first pad and first terminals connected to the first pad, wherein the first terminals extend away from the substrate; and a second electrode with a second pad and second terminals connected to the second pad, wherein the second terminals extend toward the substrate, wherein the first terminals and the second terminals are staggered and separated by an interlayer dielectric layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No.63/034,450 filed on Jun. 4, 2020, the entirety of which is incorporatedby reference herein.

BACKGROUND Field of the Disclosure

The present disclosure relates to a semiconductor device, and inparticular, to a semiconductor device with a capacitor element.

Description of the Related Art

Semiconductor devices can be applied in various fields, such as smartTVs, voice assistant devices (VAD), tablets, feature phones,smartphones, optical and Blu-ray DVD players, and so on. Semiconductordevices are typically manufactured in the following manner: sequentiallydepositing an insulation or dielectric layer, a conductive layer, and asemiconductor material layer on a semiconductor substrate, andpatterning the various material layers by using lithography and etchingtechnique to forming circuit components and elements thereon.

In an effort to continue the scaling-down process of semiconductordevices, the functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometric size(i.e., the smallest component (or line) that can be created using thefabrication process) has decreased. This scaling-down process generallyprovides benefits by improving production efficiency and performance ofsemiconductor devices, and lowering associated costs as well. Suchscaling down has also been accompanied by increased complexity in designand manufacturing of semiconductor devices. Parallel advances inmanufacturing have allowed increasingly complex designs to be fabricatedwith precision and reliability.

However, numerous challenges have arisen in the effort to continue thescaling-down of semiconductor devices. For example, fluctuations (ornoises) in power supply (or being referred to power supply noise)adversely affect performance of semiconductor devices. To reduce powersupply noise, decoupling capacitors may be integrated into semiconductordevices and used as charge reservoirs to prevent unwanted drop or risein power supply. Existing decoupling capacitors for semiconductordevices have been generally adequate for their intended purposes, butthey have not been entirely satisfactory in all respects.

SUMMARY

Some embodiments of the present disclosure provide a semiconductordevice. An embodiment of the present disclosure provides a semiconductordevice, which includes a substrate and at least one capacitor element.The capacitor element is on the substrate. The capacitor elementincludes a first electrode with a first pad and first terminalsconnected to the first pad, wherein the first terminals extend away fromthe substrate; and a second electrode with a second pad and secondterminals connected to the second pad, wherein the second terminalsextend toward the substrate, wherein the first terminals and the secondterminals are staggered and separated by an interlayer dielectric layer.

Another embodiment of the present disclosure provides a semiconductordevice, which includes a substrate and at least one capacitor element oneach of the opposite surfaces of the substrate. Each capacitor elementincludes a first electrode with a first pad and first terminalsconnected to the first pad, wherein the first terminals extend away fromthe substrate; and a second electrode with a second pad and secondterminals connected to the second pad, wherein the second terminalsextend toward the substrate, wherein the first terminals and the secondterminals are staggered and separated by an interlayer dielectric layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIGS. 1-3 illustrate schematic cross-sectional views of a semiconductordevice, in accordance with some embodiments of the present disclosure.

FIGS. 4-6 illustrate schematic cross-sectional views of a semiconductordevice, in accordance with other embodiments of the present disclosure.

DETAILED DESCRIPTION OF THE DISCLOSURE

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Additionally, in some embodiments of the present disclosure, termsconcerning attachments, coupling and the like, such as “connected” and“interconnected”, refer to a relationship wherein structures are securedor attached to one another either directly or indirectly throughintervening structures, as well as both movable or rigid attachments orrelationships, unless expressly described otherwise. In addition, theterm “coupled” include any method of direct and indirect electricalconnection.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement or feature as illustrated in the figures. The spatially relativeterms are intended to encompass different orientations of the device inuse or operation in addition to the orientation depicted in the figures.The apparatus may be otherwise oriented (rotated 90 degrees or at otherorientations) and the spatially relative descriptors used herein maylikewise be interpreted accordingly.

The terms “about”, “approximately”, and “roughly” typically mean±20% ofthe stated value, or ±10% of the stated value, or ±5% of the statedvalue, or ±3% of the stated value, or ±2% of the stated value, or ±1% ofthe stated value, or ±0.5% of the stated value. The stated value of thepresent disclosure is an approximate value. When there is no specificdescription, the stated value includes the meaning of “about”,“approximately”, and “roughly”. The terminology used herein is for thepurpose of describing particular embodiments only and is not intended tolimit the invention. As used herein, the singular terms “a,” “an” and“the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise.

Some embodiments of the disclosure are described below. Additionaloperations can be provided before, during, and/or after the stagesdescribed in these embodiments. Some of the stages that are describedcan be replaced or eliminated for different embodiments. Additionalfeatures can be added to the semiconductor device structure. Some of thefeatures described below can be replaced or eliminated for differentembodiments. Although some embodiments are discussed with operationsperformed in a particular order, these operations may be performed inanother logical order.

As the performance of semiconductor devices have been improved, largercurrents at higher frequencies but with lower power supply are demandedby these high-performance semiconductor devices. In such conditions, thedesign of power system becomes increasingly challenging. For example,the impact of power supply noise on the performance of semiconductordevices is critical and should be addressed. The present disclosureprovides a semiconductor device with at least one capacitor element as adecoupling capacitor to prevent power supply noise (such as unwantedrise or drop in power supply) in the semiconductor device. In someembodiments, a high-density capacitor element is provided to achievehigher capacitance for the decoupling capacitor and higher compactnessof the semiconductor device.

FIGS. 1-3 illustrate schematic cross-sectional views of a semiconductordevice, in accordance with some embodiments of the present disclosure.Referring to FIG. 1 , semiconductor device 10 includes a substrate 100and at least one capacitor element 104 on the substrate 100. Thesubstrate 100 may include an elementary (single element) semiconductor,such as silicon or germanium in a crystalline structure; a compoundsemiconductor, such as silicon carbide (SiC), gallium arsenide (GaAs),gallium phosphide (GaP), indium phosphide (InP), indium arsenide (InAs),and/or indium antimonide (InSb); an alloy semiconductor such as SiGe,GeC, GaAsP, AlInAs, AlGaAs, GalnAs, GaInP, and/or GaInAsP; anon-semiconductor material, such as soda-lime glass, fused silica, fusedquartz, and/or calcium fluoride (CaF₂); and/or combinations thereof. Forexample, the material of the elementary semiconductor may includemonocrystalline silicon (Si), polycrystalline silicon (poly-Si),amorphous silicon (a-Si), germanium (Ge), and/or carbon (C) (e.g.diamond).

The capacitor element 104 includes a first electrode 111 and a secondelectrode 112. In some embodiments, the first electrode 111 and thesecond electrode 112 are formed as a first comb-shaped structure and asecond comb-shaped structure, respectively. The first electrode 111 isconfigured to have a first pad 111P and a plurality of first terminals111T connected to the first pad 111P. The first terminals 111T extendaway from the substrate 100. The second electrode 112 is configured tohave a second pad 112P and second terminals 112T connected to the secondpad 112P. The second terminals 112T extend toward the substrate 100. Insome embodiments, the extension directions of the first terminals 111Tand the second terminals 112T are parallel. As shown in FIG. 1 , thefirst terminals 111T and the second terminals 112T are staggered andseparated by an interlayer dielectric layer 106. In some embodiments,the terminals 111T and the second terminals 112T are alternatelyarranged in a horizontal direction parallel to the surface of thesubstrate 100 and extend between the first pad 111P and the second pad112P in a vertical direction with respect to the surface of thesubstrate 100. In some embodiments, the capacitor element 104 could becontained in a memory module, for example, a DRAM cell, but not limited.

In some embodiments, the method of forming the capacitor element 104includes (but not limited to) depositing and patterning a material layerfor the first pad 111P, depositing and patterning a material layer forthe first terminals 111T on the first pad 111P (thereby forming thefirst electrode 111 of the capacitor element 104), depositing a materiallayer for the interlayer dielectric layer 106, patterning the materiallayer for the interlayer dielectric layer 106 to form openings,depositing a material layer for the second terminals 112T in theopenings, depositing and patterning a material layer for the second pad112P on the second terminals 112T (thereby forming the second electrode112 of the capacitor element 104). In some embodiments, patterning thematerial layer for the interlayer dielectric layer 106 to form openingsmay include etching (e.g. dry etching, wet etching, reactive ion etching(RIE)) the material layer to form the openings. In some embodiments, aplanarization process such as chemical mechanical polishing (CMP)process may be performed to remove excess material layer for the secondterminals 112T outside the openings after depositing the material layerfor the second terminals 112T in the openings.

The material of the first pad 111P and the second pad 112P may include aconductive material, such as metal, metal nitride, metal oxide, metalalloy, doped polysilicon or another suitable conductive material, acombination thereof. For example, the metal may include Au, Ni, Pt, Pd,Ir, Ti, Cr, W, Al, Cu, or another suitable material; the metal nitridemay include MoN, WN, TiN, TaN, TaSiN, TaCN, TiAlN, or another suitablematerial. In some embodiments, the first pad 111P and the second pad112P may include the same material. In other embodiments, the first pad111P and the second pad 112P may include different materials. Thematerial layer for the first pad 111P and the second pad 112P may bedeposited by chemical vapor deposition (CVD) process, physical vapordeposition (PVD) process, atomic layer deposition (ALD) process, or thelike. The material of the first terminals 111T and the second terminals112T may be high-k material including, for example, metal oxide or metalnitride. In some embodiments, the high-k material may include HfO₂,HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, zirconium oxide, aluminum oxide,hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, other suitable high-kdielectric materials, and/or combinations thereof. The material layerfor the first terminals 111T and the second terminals 112T may bedeposited by any suitable method, such as CVD process, plasma-enhancedCVD (PECVD) process, spin-on-glass process, a combination thereof, orthe like. In some embodiments, the first terminals 111T and the secondterminals 112T may include the same material. In other embodiments, thefirst terminals 111T and the second terminals 112T may include differentmaterials. According to some embodiments of the present disclosure, thefirst pad 111P and the second pad 112P may each include Cu, W, or SiGe,and the first terminals 111T and the second terminals 112T may eachinclude TiN or TaN.

The interlayer dielectric layer 106 (or may be referred to inter-metaldielectric (IMD) may include a dielectric material (e.g., asemiconductor oxide, a semiconductor nitride, a semiconductoroxynitride, a semiconductor carbide, etc.), SOG, fluoride-doped silicateglass (FSG), phosphosilicate glass (PSG), borophosphosilicate glass(BPSG), xerogel, aerogel, amorphous fluorinated carbon, parylene,benzocyclobutene (BCB), and/or combinations thereof. The interlayerdielectric layer 106 may be form by CVD process, ALD process, PECVDprocess, high-density CVD process, PVD process, one or more otherapplicable processes, or a combination thereof.

In some embodiments, the semiconductor device 10 includes a dielectriclayer 101 disposed between the substrate 100 and the capacitor element104. The dielectric layer 101 may be single layer or multilayerstructure including dielectric material formed of semiconductor oxide,semiconductor nitride, semiconductor oxynitride, semiconductor carbideor combinations thereof. The dielectric layer 101 may be formed by CVDprocess, ALD process, PVD process, one or more other applicableprocesses, or a combination thereof.

According to some embodiments of the present disclosure, thesemiconductor device 10 includes a plurality of capacitor elements 104successively stacked on the substrate 100. In some embodiments, thecapacitor elements 104 are successively stacked on the dielectric layer101. The successively stacked capacitor elements 104 with the firstelectrode 111 and the second electrode 112 may form more compactcapacitors and may be used as decoupling capacitors to provide a highercapacitance than conventional decoupling capacitors. The capacitanceprovided by the capacitor elements 104 of some embodiments of thepresent disclosure may be greater than 2.5 times of the capacitanceprovided by a conventional decoupling capacitor. For example, theconventional decoupling capacitor (such as cylinder-shaped orplate-shaped decoupling capacitor) of thickness 100 μm may provide avalue about 600-1300 nF/mm² (capacitance/area), while the capacitorelements 104 having the first electrode 111 and the second electrode 112of thickness less than 100 μm may provide a value greater than 1200-2600nF/mm² (capacitance/area). The capacitor elements 104 of someembodiments of the present disclosure has a higher value ofcapacitance/area and a smaller thickness and may be used as a decouplingcapacitor for semiconductor device 10. As a result, power supply noisesin the semiconductor device 10 may be prevented due to higher value ofcapacitance/area provided by the capacitor elements 104. Furthermore,since the thickness of the semiconductor device 10 with the decouplingcapacitor (i.e. the capacitor elements 104) is reduced, the parasiticinductance and resistance will be reduced.

In some embodiments, the semiconductor device 10 may include one or moredielectric layers 102 between a lower one of the capacitor elements 104and an upper one of the capacitor elements 104. As shown in FIG. 1 ,conductive layers M1 a/M1 b, M2 a/M2 b, and M3 a/M3 b are disposed inthe respective dielectric layers 102, and vias V1 a/V1 b, V2 a/V2 b, andV3 a/V3 b are disposed in the respective interlayer dielectric layers106. In some embodiments, the first pad 111P of the lower one of thecapacitor elements 104 is connected to the second pad 112P of the upperone of the capacitor elements 104 through, for example, the via V1 b,the conductive layer M1 b, and the via V2 b, and the second pad 112P ofthe lower one of the capacitor elements 104 is connected to the firstpad 111P of the upper one of the capacitor elements 104 through, forexample, the via V1 a and the conductive layer M1 a. The number ofcapacitor elements 104 successively stacked on the substrate 100 is notparticularly limited. The number may be two, six, twenty one, or up tofifty or more. In some embodiments, the overall thickness of thesemiconductor device 10 with the capacitor elements 104 is less than 150μm. The successively stacked capacitor elements 104 may form ahigh-density decoupling capacitor in the semiconductor device 10 andprovide a greater capacitance than conventional decoupling capacitors.In addition, the thickness of the decoupling capacitor formed by thecapacitor elements 104 is less than the conventional decouplingcapacitors. Therefore, the resulting semiconductor device with thecapacitor elements 104 is thinner than those semiconductor devices withconventional decoupling capacitors and a better heat dissipation of theresulting semiconductor device may be achieved.

Referring to FIG. 2 , the capacitor elements 104 and an IC element 108may be integrated on the same substrate 100. For simplicity, likefeatures in FIG. 2 and FIG. 1 are designated with like referencenumerals and some of the description is not repeated. The separationmark S represents one or more elements may be disposed between thecapacitor elements 104 and the IC element 108, or, in some embodiments,the capacitor elements 104 is adjacent to the IC element 108 and noother element is disposed therebetween. The IC element 108 may include amemory device, a graphics processing unit (GPU), a central processingunit (CPU), or any other processing unit or control unit. In someembodiments, the IC element 108 may be connected to the capacitorelements 104 via interconnections (not shown) to prevent noise from thepower supply of the IC element 108. It should be noted that the ICelement 108 disposed between dielectric layer 101 and dielectric layer102 is merely illustrative. In some embodiments, the IC element 108 maybe disposed on the dielectric layer 102 and be substantially on the samelevel as the capacitor elements 104. In some embodiments, the IC element108 may be connected to another element through the via Vic, theconductive layer M1 c, the via V2 c, and the conductive layer M2 c.

Referring to FIG. 3 , the semiconductor device 10 includes a main logicdie containing IC elements 110 and 114 attached on the dielectric layer102, in accordance with some embodiments of the present disclosure. Forsimplicity, like features in FIG. 3 and FIGS. 1 and 2 are designatedwith like reference numerals and some of the description is notrepeated. The IC elements 110 and 114 may include memory, a graphicsprocessing unit (GPU), a central processing unit (CPU), or a combinationthereof. The semiconductor device 10 may include connection features C1and C2 which penetrate through the substrate 100. In furtherembodiments, the connection features C1 and C2 penetrate through thedielectric layer 102, the interlayer dielectric layer 106, thedielectric layer 101 and the substrate 100, and extend beneath a bottomsurface of the substrate 100. In some embodiments, the connectionfeatures C1 and C2 may be connected to respective solder bumps below thesubstrate 100. In some embodiments, the connection features C1 and C2may be connected to the IC elements 114 and 110 respectively. In someembodiments, the connection features C1 and C2 may be bonded to, forexample, a printed circuit board (PCB). In some embodiments, the secondpad 111P of one of the capacitor elements 104 may be connected to theconnection feature C1. In some embodiment, the connection features C1and C2 may be formed by a method including through silicon via (TSV)technique. The main logic die including IC elements 110 and 114, thecapacitor elements 104, the IC element 108 are integrated on the samesubstrate 100. This integration may be referred to heterogeneousintegration, which represents an integration of system on chips (SoC),memories, power supply, power management, and/or other components. Insome embodiments, the semiconductor device 10 may include plural sets ofthe capacitor elements 104 disposed on the substrate 100, and each ofthe plural sets of the capacitor elements may be respectively connectedto components heterogeneously integrated in the semiconductor device 10.Accordingly, the plural sets of the capacitor elements 104 may be usedas decoupling capacitors to provide higher capacitance for thecomponents. Furthermore, the thickness of the semiconductor device 10with the plural sets of the capacitor elements (used as decouplingcapacitors) is less than the thickness of the semiconductor device withthe conventional decoupling capacitors. For example, one embodiment ofthe present disclosure may provide a decoupling capacitor of thicknessequal to or less than 100 μm with a value greater than 2600 nF/mm²(capacitance/area), while the thickness of the conventional decouplingcapacitor may need to be greater than 260 μm so that a value greaterthan 2600 nF/mm² (capacitance/area) may be achieved. Therefore,according to some embodiments of the present disclosure, parasiticinductance and resistance of heterogeneous integration with decouplingcapacitors may be reduced by providing thinner decoupling capacitors. Insome embodiments, the IC element 108 may include memory and the ICelement 110 may include CPU. In such embodiments, the performance of thesemiconductor device may be improved due to shorter physical path fordata communication between CPU and memory.

FIGS. 4-6 illustrate schematic cross-sectional views of a semiconductordevice, in accordance with other embodiments of the present disclosure.Referring to FIG. 4 , the semiconductor device 20 includes the substrate100 and at least one capacitor element 104 on each of the oppositesurfaces of the substrate 100. For simplicity, like features insemiconductor device 20 and semiconductor device 10 are designated withlike reference numerals and some of the description is not repeated. Thecapacitor element 104 of the semiconductor device 20 includes a firstelectrode 111 and a second electrode 112. The first electrode 111 isconfigured to have a first pad 111P and first terminals 111T connectedto the first pad 111P. The first terminals 111T extend away from thesubstrate 100. The second electrode 112 is configured to have a secondpad 112P and second terminals 112T connected to the second pad 112P. Thesecond terminals 112T extend toward the substrate 100. As shown in FIG.4 , the first terminals 111T and the second terminals 112T are staggeredand separated by the interlayer dielectric layer 106. The material ofthe first pad 111P and the second pad 112P may include a conductivematerial, such as metal, metal nitride, metal oxide, metal alloy,another suitable conductive material, a combination thereof. Thematerial of the first terminals 111T and the second terminals 112T maybe high-k material including, for example, metal oxide or metal nitride.The method of forming the capacitor element 104 of the semiconductordevice 20 is similar to the method described above with respect thesemiconductor device 10 in FIG. 1 .

In some embodiments, the capacitor element 104 includes a plurality ofcapacitor elements 104 successively stacked on each of the oppositesurfaces the substrate 100. In some embodiments, the sum of thethickness of each of the capacitor elements 104 is less than 100 μm. Insome embodiments, the thickness of each of the capacitor elements 104 isabout 2 μm. In some embodiments, the thickness of the semiconductordevice 20 with the capacitor elements 104 is less than 150 μm. Thesuccessively stacked capacitor elements 104 may form high-densitycapacitors on the opposite surfaces of the substrate 100 and may be usedas decoupling capacitors to provide higher capacitance than conventionaldecoupling capacitors. Therefore, power supply noises in thesemiconductor device 20 may be prevented more effectively thanconventional decoupling capacitors.

In some embodiments, the semiconductor device 20 may include one or moredielectric layers 102 between a lower one of the capacitor elements 104and an upper one of the capacitor elements 104. As shown in FIG. 4 ,conductive layers M1 a/M1 b and conductive layers M2 a/M2 b are disposedin the respective dielectric layers 102, and vias V1 b, V2 b, V3 b, andV4 b are disposed in the respective interlayer dielectric layers 106. Insome embodiments, for capacitor elements 104 below the lower surface ofthe semiconductor device 20, the first pad 111P of the lower one of thecapacitor elements 104 is connected to the second pad 112P of the upperone of the capacitor elements 104 through, for example, the via V1 b,the conductive layer M1 b, and the via V2 b, and the second pad 112P ofthe lower one of the capacitor elements 104 is connected to the firstpad 111P of the upper one of the capacitor elements 104 through, forexample, the conductive layer M1 a. Similarly, in some embodiments, forcapacitor elements 104 on the upper surface of the semiconductor device20, the first pad 111P of the lower one of the capacitor elements 104 isconnected to the second pad 112P of the upper one of the capacitorelements 104 through, for example, the via V3 b, the conductive layer M2b, and the via V4 b, and the second pad 112P of the lower one of thecapacitor elements 104 is connected to the first pad 111P of the upperone of the capacitor elements 104 through, for example, the conductivelayer M2 a. The number of capacitor elements 104 successively stacked onthe opposite surfaces of the substrate 100 is not particularly limited.The number may be one, eleven, thirty, or up to fifty or more.

Referring to FIG. 5 , the embodiment describes a hybrid structure formedby techniques of at least two wafers bonding, the semiconductor device20 includes a main logic die containing an IC element 116 attached onthe dielectric layer 102, in accordance with other embodiments of thepresent disclosure. For simplicity, like features in FIG. 5 and FIG. 4are designated with like reference numerals and some of the descriptionis not repeated. The IC element 116 may include memory, a graphicsprocessing unit (GPU), a central processing unit (CPU), or a combinationthereof. The semiconductor device 20 may include connection features C3,C4, and C5 which may be bonded to, for example, a printed circuit board(PCB). In some embodiment, the connection features connection featuresC3, C4, and C5 may be formed by a method including through silicon via(TSV) technique. As shown in FIG. 5 , the second pad 112P of the lowerone of the capacitor elements 104 is connected to the first pad 111P ofthe upper one of the capacitor elements 104 through the connectionfeature C4 in some embodiments.

Referring to FIG. 6 , the embodiment describes a hybrid structure formedby techniques of at least three wafers bonding, the semiconductor device20 includes a main logic die containing an IC element 117 attached tothe interlayer dielectric layer 106 on the upper surface of thesubstrate 100 and another main logic die containing an IC element 118attached to the interlayer dielectric layer 106 under the lower surfaceof the substrate 100, in accordance with other embodiments of thepresent disclosure. In some embodiments, the main logic die containingan IC element 117 is attached to the interlayer dielectric layer 106 onthe topmost capacitor element 104 and the main logic die containing anIC element 118 is attached to the interlayer dielectric layer 106 underthe bottommost capacitor element 104. For simplicity, like features inFIG. 6 and FIG. 4 are designated with like reference numerals and someof the description is not repeated. In some embodiments, thesemiconductor device 20 may include an IC element 120 connected to theIC element 117 through via V3 c and an IC element 122 connected to theIC element 118 through via Vic. FIG. 6 illustrates another example ofheterogeneous integration, where two main logic dies are respectivelyattached to the respective interlayer dielectric layers 106 above and/orbelow the least one capacitor element on the opposite surfaces of thesubstrate 100, in accordance with some embodiments of the presentdisclosure. In such embodiments of heterogeneous integration, thesemiconductor device 20 may be thinner and more compact since thecomponents are integrated on opposite sides of the same substrate 100,and the communication between components is more efficient due toshorter physical paths among the components are provided.

The embodiments of the present disclosure provide many benefits to asemiconductor device. For example, the power supply noises in thesemiconductor device may be prevented by the capacitor elements moreeffectively and a stable power supply is achieved. The capacitorelements may form high-density decoupling capacitors to provide thinnerdecoupling capacitors for the semiconductor device. In addition, thismay improve heat dissipation in the semiconductor device with decouplingcapacitors.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a substrate;at least one capacitor element on the substrate, wherein the at leastone capacitor element comprises: a first electrode with a first pad andfirst terminals connected to the first pad, wherein the first terminalsextend away from the substrate; and a second electrode with a second padand second terminals connected to the second pad, wherein the secondterminals extend toward the substrate, wherein the first terminals andthe second terminals are staggered and separated by an interlayerdielectric layer; and a connection feature penetrating through theinterlayer dielectric layer and the substrate, wherein the connectionfeature extends to reach a bottom surface of the substrate, and thefirst pad of one of the at least one capacitor element is connected tothe connection feature.
 2. The semiconductor device as claimed in claim1, further comprising a dielectric layer between the substrate and theat least one capacitor element.
 3. The semiconductor device as claimedin claim 1, wherein the at least one capacitor element comprises aplurality of capacitor elements successively and vertically stacked onthe substrate, and each of the plurality of capacitor elements comprisesthe first electrode with the first pad and the first terminals and thesecond electrode with the second pad and the second terminals.
 4. Thesemiconductor device as claimed in claim 3, wherein the first pad of alower one of the capacitor elements is connected to the second pad of anupper one of the capacitor elements.
 5. The semiconductor device asclaimed in claim 4, wherein the second pad of the lower one of thecapacitor elements is connected to the first pad of the upper one of thecapacitor elements.
 6. The semiconductor device as claimed in claim 5,further comprising a dielectric layer between the lower one of thecapacitor elements and the upper one of the capacitor elements, and aconductive layer in the dielectric layer.
 7. The semiconductor device asclaimed in claim 1, further comprising a first IC element on thesubstrate, wherein the first IC element is substantially on a same levelas the at least one capacitor element, and the first IC element isconnected to the connection feature.
 8. The semiconductor device asclaimed in claim 7, wherein the first IC element comprises memory, agraphics processing unit (GPU), a central processing unit (CPU), or acombination thereof.
 9. The semiconductor device as claimed in claim 8,further comprising a second IC element over and connected to the firstIC element, and a third IC element over the at least one capacitorelement.
 10. The semiconductor device as claimed in claim 9, wherein thesecond IC element and the third IC element each comprises memory, agraphics processing unit (GPU), a central processing unit (CPU), or acombination thereof.